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  050-7703 rev a 10 - 2012 product benefits ? higher reliability systems ? minimizes or eliminates snubber product features ? zero recovery times (t rr ) ? popular to-247 package or surface mount d 3 pak package ? low forward voltage ? low leakage current product applications ? anti-parallel diode -switchmode power supply -inverters ? power factor correction (pfc) apt30scd120b APT30SCD120S 1200v 30a maximum ratings t c = 25c unless otherwise speci ed. microsemi website - http://www.microsemi.com zero recovery silicon carbide schottky diode symbol characteristic / test conditions ratings unit v r maximum d.c. reverse voltage 1200 volts v rrm maximum peak repetitive reverse voltage v rwm maximum working peak reverse voltage i f maximum d.c. forward current t c = 25c 99 amps t c = 135c 29 i frm repetitive peak forward suge current (t j = 45c, t p = 10ms, half sine wave) 150 i fsm non-repetitive forward surge current (t j = 25c, t p = 10ms, half sine) 330 p tot power dissipation t c = 25c 291 w t c = 125c 93 t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for 10 seconds 300 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 30a t j = 25c 1.5 1.8 volts i f = 30a, t j = 150c 2.1 i rm maximum reverse leakage current v r = 1200v t j = 25c 600 a v r = 1200v, t j = 150c 3000 q c total capactive charge v r = 800v, i f = 30a, di/dt = -100a/ s, t j = 25c 200 nc c t junction capacitance v r = 0v, t j = 25c, f = 1mhz 2100 pf junction capacitance v r = 200v, t j = 25c, f = 1mhz 228 junction capacitance v r = 400v, t j = 25c, f = 1mhz 167 static electrical characteristics 1 - cathode 2 - anode back of case - cathode t o - 2 4 7 1 2 d 3 pak 1 2
apt30scd120b_s 050-7703 rev a 10 - 2012 thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speci cations and information contained herein. symbol characteristic / test conditions min typ max unit r jc junction-to-case thermal resistance 0.43 c/w w t package weight 0.22 oz 5.9 g torque maximum mounting torque 10 lbin 1.1 nm 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.60 0 10 -4 10 -3 10 -2 0.1 1 10 100 10 -5 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration z jc , thermal impedance (c/w) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 25 50 75 100 125 150 v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) case temperature (c) figure 3, maximum forward current vs. case temperature 100 t j = -55 c t j = 25 c t j = 125 c t j = 150 c typical performance curves i f (peak) (a)
050-7703 rev a 10-2012 apt30scd120b_s typical performance curves 0 50 100 150 200 250 300 25 50 75 100 125 150 case temperature (c) figure 4. maximum power dissipation vs. case temperature p total (w) 150 170 190 210 230 250 270 290 200 300 400 500 600 700 800 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 0 200 400 600 800 v r , reverse voltage (v) figure 6. reverse recovery charge vs. v r q rr , reverse recovery charge (nc) v r , reverse voltage (v) figure 5. reverse leakage currents vs. reverse voltage i r , reverse leakage current ( a) v r , reverse voltage (v) figure 7. junction capacitance vs. reverse voltage c j , junction capacitance (pf) 25c 75c 125c 150c 15.85 (.624) 16.05(.632) 18.70 (.736) 19.10 (.752) 1.15 (.045) 1.45 (.057) 5.45 (.215) bsc (2 plcs. ) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106) 2.90 (.114) 0.40 (.016) 0.65 (.026) heat sink (cathode) and leads are plated 2.40 (.094) 2.70 (.106) (base of lead) cathode (heat sink) 1.90 (.075) 2.10 (.083) cathode anode 0.020 (.001) 0.250 (.010) 1.20 (.047) 1.40 (.055) 12.40 (.488) 12.70 (.500) 13.30 (.524) 13.60(.535) 1.00 (.039) 1.15(.045) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) bsc 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) cathode anode cathode to-247 package outline d 3 pak package outline 1.016(.040) dimensions in millimeters and (inches) dimensions in millimeters and (inches) d if /d t = -200a/ s t j = 125c
apt30scd120b_s 050-7703 rev a 10-2012 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure a greement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be m odi ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intelle ctual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, induc ement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of cer of microsemi. microsemi reserves the right to change the con guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical e quipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci cations believed to be reliable but are not veri ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers nal application. user or customer shall not rely on any data and performance speci cations or parameters provided by microsemi. it is the customer?s and user?s re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information c ontained herein is provided ?as is, where is? and with all faults, and the entire risk associated with such information is entirely with the us er. microsemi speci cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer:


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